Local structure of In_(0.5)Ga_(0.5)As from joint high-resolution and differential pair distribution function analysis

摘要

High resolution total and indium differential atomic pair distributionfunctions (PDFs) for In_(0.5)Ga_(0.5)As alloys have been obtained by highenergy and anomalous x-ray diffraction experiments, respectively. The firstpeak in the total PDF is resolved as a doublet due to the presence of twodistinct bond lengths, In-As and Ga-As. The In differential PDF, which involvesonly atomic pairs containing In, yields chemical specific information and helpsease the structure data interpretation. Both PDFs have been fit with structuremodels and the way in that the underlying cubic zinc-blende lattice ofIn_(0.5)Ga_(0.5)As semiconductor alloy distorts locally to accommodate thedistinct In-As and Ga-As bond lengths present has been quantified.